The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Aug. 30, 1999
Applicant:
Inventor:
Fumikatsu Uesawa, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/30 ; G03F 7/38 ; G03F 7/20 ; G03C 5/56 ;
U.S. Cl.
CPC ...
G03F 7/30 ; G03F 7/38 ; G03F 7/20 ; G03C 5/56 ;
Abstract
A method of forming a resist pattern comprising the steps of depositing a resist on a semiconductor substrate, performing a first exposure on the resist using a reticle with a certain pattern formed on it as a mask to change the degree of polymerization at the exposed area in the resist, causing diffusion of a silicon compound to silylate selectively a part of the surface of the resist, performing a second exposure on the resist so that light passing through the silylated area and the unsilylated area become inverse in phase, and developing the resist for forming a micropattern on the resist.