The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Sep. 16, 1998
Applicant:
Inventor:
Christopher E. Obszarny, Poughkeepsie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/02 ;
U.S. Cl.
CPC ...
C23F 1/02 ;
Abstract
Disclosed are shielding platters for semiconductor wafers, and more particularly a reactive ion etch (RIE) chamber wafer masking system, wherein a mechanical mask facilitates the implementation of multiple etches on a single semiconductor wafer.
Obszarny, Christopher. (2001). Reactive ion etch chamber wafer masking system (U.S. Patent No. 6176967). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6176967
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile