The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
May. 07, 1999
Glenn S. Solomon, Redwood City, CA (US);
David J. Miller, Belmont, CA (US);
Tetsuzo Ueda, Menlo Park, CA (US);
Other;
Abstract
An n-doped, high quality gallium nitride substrate suitable for further device or epitaxial processing, and method for making the same. The nitride substrate is produced by epitaxial deposition of first metal nitride layer on a non-native substrate followed by a second deposition of metal nitride. During the second deposition of metal nitride, a liquid metal layer is formed at the interface of the non-native substrate and the metal nitride layer form. The formed metal nitride layer may be detached from the non-native substrate to provide an metal nitride substrate with a high quality inverse surface. A epitaxial metal nitride layer may be deposited on the inverse surface of metal nitride substrate. The metal nitride substrate and the epitaxial metal nitride layer thereon may be deposited using the same hydride vapor-phase epitaxy system.