The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2001

Filed:

Dec. 15, 1998
Applicant:
Inventors:

Glen Adam Garfunkel, San Jose, CA (US);

Wen-Chien David Hsiao, San Jose, CA (US);

Edward Hinpong Lee, San Jose, CA (US);

Douglas Johnson Werner, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/127 ;
U.S. Cl.
CPC ...
G11B 5/127 ;
Abstract

The present invention extends the high resistance lead layers of a read head straight back into the head from each of the first and second edges of the read sensor. This lessens the length of each of the high resistance lead layers so that they do not have to be made thicker to satisfy resistance requirements. Accordingly, a lateral width of each high resistance lead portion along the ABS and a thickness thereof are chosen so as to minimize the thickness while yet satisfying the resistance requirements. Further, a method of making the first and second lead layers is provided that minimizes the thickness of the high resistance lead layers. Instead of constructing the high resistance lead layers first, the present method constructs the high resistance lead layers after defining a stripe height of the read sensor so that the lateral expanse of the high resistance lead layers is not altered by ion milling, which ion milling increases the resistance of the high resistance lead layers.


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