The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Feb. 08, 1999
Daniel Mavencamp, Brandon, MS (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An improved bias network for reducing cross-over distortion in a device having complementary p-MOS and n-MOS power transistors includes complementary helper transistors coupled to power transistors for discharging currents while the power transistors are biased in sub-threshold regions of operation. The bias network further includes complementary resistors coupled to the power transistors for biasing the power transistors within saturation regions of operation and for biasing the helper transistors within saturation regions of operation, and complementary feedback circuits connected to the power transistors and operating in conjunction with the resistors for biasing the helper transistors within the saturation regions of operation. Preferably, each of the power transistors are biased into the saturation regions by gate voltage swings of no more than 200 millivolts from the sub-threshold region.