The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Mar. 16, 1998
Ryuichi Okamura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device has at least a p-channel MOS field effect transistor and at least an n-channel MOS field effect transistor, both of which are integrated on a single semiconductor substrate. The p-channel MOS field effect transistor has at least a first p-type lightly doped diffusion region adjacent to a p-type drain diffusion region. The n-channel MOS field effect transistor has at least a first n-type lightly doped diffusion region adjacent to an n-type drain diffusion region. The first p-type lightly doped diffusion region of the p-channel MOS field effect transistor is shorter in a direction parallel to a channel length direction than a first n-type lightly doped diffusion region of the n-channel MOS field effect transistor.