The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Oct. 27, 1997
Applicant:
Inventors:
Assignee:
Vanguard Semiconductor Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1311 ;
U.S. Cl.
CPC ...
H01L 2/1311 ;
Abstract
A method for planarizing DRAM cells comprising the steps of providing a silicon substrate having a field oxide layer, an oxide layer and a capacitor formed thereon, then forming a first dielectric layer over the substrate. Next, portions of the first dielectric layer is etched back to form a spacer layer, and then a second dielectric layer is formed over the spacer layer. Thereafter, an insulating layer is formed over the second dielectric layer. Finally, the insulating layer is fully etched back to form a third dielectric layer.