The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Nov. 23, 1999
Patrick J. Kelley, Orlando, FL (US);
Ranbir Singh, Orlando, FL (US);
Larry B. Fritzinger, Orlando, FL (US);
Cynthia C. Lee, Orlando, FL (US);
John Simon Molloy, Orlando, FL (US);
Lucent Technologies, Inc., Murray Hill, NJ (US);
Abstract
A method of shallow trench isolation by forming a trench in a semiconductor device comprises the steps of forming an oxide layer; forming a mask layer; anisotropically etching the mask layer; forming a second oxide layer; forming a cap layer; forming rounded end caps adjacent the mask; and transferring the rounding of the caps to the top corners of the trench. The oxide layer is formed over a substrate of the semiconductor device. The mask layer is formed over the oxide layer. The mask layer is then anisotropically etched to form the mask and an opening in the mask. The opening in the mask exposes the substrate, and the width of the opening is greater than the width of the trench. Blanket etching the cap layer forms the rounded end caps. The rounded end caps are adjacent to the mask on opposite ends of the opening, and the distance between the end caps is about equal to the width of the trench. The trench is formed by plasma etching the trench. During this process, the rounding of the end caps is transferred to the top corners of a trench.