The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Mar. 15, 1999
Tomoaki Shino, Tokyo-To, JP;
Takashi Yamada, Ebina, JP;
Makoto Yoshimi, Tokyo-To, JP;
Shigeru Kawanaka, Kawasaki, JP;
Hideaki Nii, Kawasaki, JP;
Kazumi Inoh, Yokohama, JP;
Tsuneaki Fuse, Tokyo-To, JP;
Sadayuki Yoshitomi, Tokyo-To, JP;
Mamoru Terauchi, Hiroshima, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a lateral bipolar transistor, its emitter region, base region, link base region, and so forth, are made in self alignment with side walls of masks by using partly overlapping two mask patterns. Therefore, not relying on the mask alignment accuracy, these regions are made in a precisely controlled positional relation. Thus, the lateral bipolar transistor, thus obtained, is reduced in parasitic resistance of the base and parasitic junction capacitance between the emitter and the base, and alleviated in variance of characteristics caused by fluctuation of the length of a link base region, length of the emitter-base junction and relative positions of the emitter and the collector, and can be manufactured with a high reproducibility.