The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Feb. 20, 1998
Chang-Jae Lee, Cheongju-si, KR;
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Abstract
A method of fabricating a semiconductor device having a memory device region and a logic device region on a substrate includes the steps of forming first and second gate lines on the substrate at the memory device region and the logic device region, respectively, forming a sidewall insulating layer on both sides of each of the first and second gate lines, forming a plurality of impurity regions in the substrate, forming a silicon nitride layer on the memory device including the first gate lines, forming a silicide layer on the second gate line and impurity regions at the logic device region, and forming an oxide layer on an exposed surface excluding portions over each one of the impurity regions at the memory region and the logic device region, respectively.