Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation

Abstract

A ferroelectric capacitor stack for use with an integrated circuit transistor in a ferroelectric memory cell is fabricated by: forming a first dielectric layer over the integrated circuit transistor; forming a bottom electrode over the first dielectric layer, the bottom electrode having a hole located over a first source/drain of the integrated circuit transistor; forming a second dielectric layer over the first dielectric layer and bottom electrode; forming a hole in the second dielectric layer to provide access to the bottom electrode; forming a ferroelectric plug in the hole in the second dielectric layer; forming a top electrode over the second dielectric layer and ferroelectric plug; forming a third dielectric layer over the second dielectric layer and top electrode; forming a first via through the first, second, and third dielectric layers, and through the hole in the bottom electrode, the via having sufficient width to provide access to a lateral edge of the bottom electrode hole; forming a second via through the first, second, and third dielectric layers to provide access to a second transistor source/drain; forming a third via through the third dielectric layer to provide access to the top electrode; metalizing the first via; metalizing the second via; and metalizing the third via.