The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2001

Filed:

Nov. 03, 1998
Applicant:
Inventors:

Takayuki Homma, Tokyo, JP;

Christopher E. D. Chidsey, San Francisco, CA (US);

Masaharu Watanabe, Tokyo, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 3/100 ; G01N 1/902 ;
U.S. Cl.
CPC ...
G01N 3/100 ; G01N 1/902 ;
Abstract

A silicon wafer having microscopic defects is immersed into the diluted hydrofluoric acid with spiking metal salt such as CuSO,.5H,O for 1 to 3 minutes. After immersing, metals which have selectively deposited on the microscopic defects are detected by using particle counters.


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