The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Feb. 09, 1999
Applicant:
Inventors:
Chun-Yen Chang, Hsinchu, TW;
Shih-Hciung Chan, Hsinchu, TW;
Jian-Shihn Tsang, Hsinchu, TW;
Jan-Dar Guo, Hsinchu, TW;
Wei-Chi Lai, Hsinchu, TW;
Assignee:
National Science Council, , TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 1/634 ; C30B 3/500 ;
U.S. Cl.
CPC ...
C23C 1/634 ; C30B 3/500 ;
Abstract
An epitaxial system is provided for performing an epitaxial growth of IIIA-VA compound on the wafer substrate. The epitaxial system includes a first reaction region for providing a plasma of a first reactant, a second reaction region for epitaxially reacting the plasma of the first reactant with a second reactant on a wafer, and a guiding medium disposed between the first reaction region and the second reaction region for passing therethrough the second reactant and the first reactant plasma to the second reaction region.