The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Feb. 01, 2000
Bruce E. White, Round Rock, TX (US);
Bo Jiang, Austin, TX (US);
Ramachandran Muralidhar, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of operating a semiconductor device that includes a first memory cell with discontinuous storage elements or dots (,) in lieu of a conventional floating gate can be programmed to at least one of three different states. The different states are possible because the read current for the memory cell is different when the dots are programmed near the source region or near the drain region. Embodiments may use two different potentials for power supplies or three different potentials. The two-potential embodiment simplifies the design, whereas the three-potential embodiment has a reduced risk of disturb problems in adjacent unselected memory cells (,B,,C, and,D).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile