The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Jun. 29, 1998
Manuel Mejia, San Jose, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
A random access memory cell includes a forward inverter and a feedback inverter connected to the forward inverter. The feedback inverter includes a ground access transistor configured to selectively connect and isolate the feedback inverter to ground. The ground access transistor is isolated from ground in response to a first digital state global clear signal generated during a global clear state. A set of random access memory cells are simultaneously programmed to store identical values in response to the first digital state global clear signal during the global clear state. The ground access transistor is connected to ground in response to a second digital state global clear signal generated during a programming state. Selected random access memory cells are programmed to store selected values in response to the second digital state global clear signal during the programming state.