The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2001

Filed:

Mar. 02, 1999
Applicant:
Inventor:

Walter Contrata, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/128 ;
U.S. Cl.
CPC ...
G01R 3/128 ;
Abstract

A Schottky contact of a heterojunction field effect transistor is expressed by a set of regional elements each representative of a line or a region of said Schottky contact, and current components respectively passing through the regional elements are expressed as


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