The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Aug. 27, 1998
Siemens Aktiengesellschaft, Munich, DE;
Abstract
An element that prevents the formation of a channel is arranged in a level of the channel region (Kaa) at one of two opposite sidewalls of a semiconductor structure that has a source/drain region (S/D,) and a channel region (Kaa) of a vertical selection transistor arranged therebelow. The source/drain region as well as a respective word line (W,) adjoin at both sidewalls. For folded bit lines (B,), respectively two word lines (W,) can be formed in the trenches (G,). The elements of semiconductor structures neighboring along one of the trenches (G,) are then arranged in alternation at a sidewall of the trench (G,) and at a sidewall of a neighboring trench (D,). A storage capacitor can be arranged over a substrate (,) or can be buried in the substrate (,). The connection of the selection transistor to a bit line (B,) can ensue in many ways.