Methods of forming electrically conductive lines in integrated circuit memories using self-aligned silicide blocking layers

Abstract

Conductive lines are formed in integrated circuit memories using a Silicide blocking layer that is self-aligned. The Silicide blocking layer is self-aligned by etching an electrically insulating layer that is formed between a electrically conductive lines on a substrate in an integrated circuit memory. The etching removes the electrically insulating layer from the outer surfaces of the electrically conductive lines, but leaves a portion of the electrically insulating layer on the substrate between the electrically conductive lines. The portion of the electrically insulating layer remaining on the substrate may prevent the formation of a Silicide film on the substrate during a heating step used to form contacts on the outer surfaces of the electrically conductive lines. The self-aligned Silicide blocking layer may allow a reduction in the number of steps in the fabrication of the contacts and reduce the need to align a mask to the substrate to form the Silicide blocking layer.