The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Jun. 09, 1998
Applicant:
Inventor:
Bernhard Lustig, M{umlaut over (u)}nchen, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/13205 ;
Abstract
A MOS transistor has a gate electrode (,) having a T-shaped cross-section. The gate length is defined in a first structuring step by a spacer technique. The area of the gate electrode in the upper region is defined in a second structuring step. The MOS transistor can be produced with a channel length of less than 100 nm.