The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
May. 24, 1999
Paul Nance, Munich, DE;
Wolfgang Werner, Munich, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A process for producing an epitaxial layer with laterally varying doping includes the following steps: (a) applying a patterned insulator layer to a semiconductor body; (b) growing a first epitaxial layer on the semiconductor body and the patterned insulator layer so that monocrystalline regions are formed over the semiconductor body and polycrystalline regions are formed over the patterned insulator layer, the angle of inclination (&agr;) of the interface between the monocrystalline regions and the polycrystalline regions depending on the grain size of the polycrystalline regions; (c) removing the polycrystalline regions and the insulator layer, and (d) growing a second epitaxial layer which, together with the monocrystalline regions of the first epitaxial layer, forms the epitaxial layer.