The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Mar. 12, 1999
Applicant:
Inventors:
El-Badawy Amien El-Sharawy, Gilbert, AZ (US);
Majid M. Hashemi, Sunnyvale, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
A heterojunction bipolar transistor (,) is provided with a silicon (Si) base region (,) that forms a semiconductor junction with a multilayer emitter (,) having a thin gallium arsenide (GaAs) emitter layer (,) proximate the base region (,) and a distal gallium phosphide emitter layer (40). The GaAs emitter layer (,) is sufficiently thin, preferably less than 200 Å, so as to be coherently strained.
Quick Actions:
El-Sharawy, El-Badawy. (2001). Method of forming heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction (U.S. Patent No. 6171920). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6171920
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile