The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2001

Filed:

Mar. 19, 1999
Applicant:
Inventors:

Hidetaka Satoh, Tokyo, JP;

Makoto Kambara, Tokyo, JP;

Kouichi Miyake, Tokyo, JP;

Yuh Shiohara, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 1/104 ;
U.S. Cl.
CPC ...
C30B 1/104 ;
Abstract

There is provided a method for preparing a large and perfect oxide crystal useful for oxide superconductors and laser transmitting elements. In the present method for preparing a large oxide single crystalline material such as superconductive crystals of RE123, a crystal precursor material is supercooled prior to the solidification thereof in the course of crystal growth of the oxide by a supercooling solidification process, followed by subjecting said precursor material to continuous slow heating while keeping the supercooled condition to promote crystal growth, as shown in FIG. 7. Seed crystals may be added to the crystal precursor material prior to solidification, if necessary, as also shown in FIG. 7.


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