The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2001

Filed:

Oct. 01, 1998
Applicant:
Inventors:

Nobuya Seko, Tokyo, JP;

Tadahiro Matsuzaki, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 9/00 ;
U.S. Cl.
CPC ...
H01J 9/00 ;
Abstract

A process for producing a field-emission cold cathode, which comprises steps of applying a protective sheet onto a wafer having a plurality of field-emitters formed at the surface and then dicing the resulting material to obtain individual devices, wherein the protective sheet is fitted to a frame for protective sheet and, in that state, is provided with preventive means for flowing adhesive, at the areas of the adhesive layer corresponding to the emitter areas, or wherein, at the time of the application of the protective sheet onto the wafer, the pressure applied to the protective sheet is reduced at the areas of the protective sheet corresponding to each emitter area, or wherein the protective sheet contains microspheres in the adhesive layer.


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