The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2001

Filed:

Nov. 09, 1999
Applicant:
Inventors:

Hiroshi Shigehara, Tokyo-to, JP;

Masanori Kinugasa, Yokohama, JP;

Toshinobu Hisamoto, Oita, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/01 ;
U.S. Cl.
CPC ...
H03K 3/01 ;
Abstract

Two terminals of each of transistors (P,, N,) are connected between two terminals (A, B). A body effect compensation circuit (COMP-P,) for the transistor (P,) and a body effect compensation circuit (COMP-N,) for the transistor (N,) are arranged. The back gates of transistors (P,P, P,P) in the circuit (COMP-P,) and transistors (P,N, P,N) in the circuit (COMP-N,) are commonly connected to the back gate of the transistor (P,). The back gates of transistors (N,N, N,N) in the circuit (COMP-N,) and transistors (N,P, N,P) in the circuit (COMP-P,) are commonly connected to the back gate of the transistor (N,). With this structure, in transferring a signal from one terminal (A or B) to the other terminal (B or A) or vice verse, the signal potential is transferred to the back gates of the transistors (P,, N,) at a high speed to increase the signal transfer speed.


Find Patent Forward Citations

Loading…