The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2001
Filed:
May. 04, 1998
Koji Arita, Osaka, JP;
Eiji Fujii, Ibaraki, JP;
Yasuhiro Shimada, Mishima-gun, JP;
Yasuhiro Uemoto, Otsu, JP;
Toru Nasu, Kyoto, JP;
Akihiro Matsuda, Suita, JP;
Yoshihisa Nagano, Suita, JP;
Atsuo Inoue, Otokuni-gun, JP;
Taketoshi Matsuura, Takatsuki, JP;
Tatsuo Otsuki, Takatsuki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm,or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10,atoms/cm,or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.