The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2001
Filed:
Jun. 01, 1998
Domenico Caputo, Patrica, IT;
Fabrizio Palma, Rome, IT;
Other;
Abstract
A system for the detection of infrared light (IR with wavelength &lgr;>800 nm) of high sensitivity. It is based on the measurement of the capacitance in structures made of amorphous silicon, constituted of a junction having two electrodes connecting to outside and susceptible of being built using already-known technologies for the deposition of thin films. The p,and n,layers (FIG.,) are made of materials strongly doped with boron and phosphorous atoms. During the fabrication process the temperatures are such as to permit its construction on various substrates. The technologies used make its fabrication possible on large areas and its conformation in two-dimensional matrices of high resolution.