The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2001
Filed:
Aug. 14, 1997
Masakazu Muroyama, Kanagawa, JP;
Abstract
An SiOF layer is formed by using as raw material an organic Si compound having Si—F bonds. Since an organic Si compound is used as raw material, an intermediate product being formed during the formation of an SiOF layer is liable to polymerize and has fluidity. Moreover, since the organic Si compound has Si—F bonds, low in bond energy, and is thus capable of easily getting only Si—F bonds separated, the SiOF layer is prevented from getting contaminated by reaction by-products and fluorine can be introduced into the SiOF layer in stable fashion. Therefore, an insulator layer, low in dielectric constant, low in hygroscopicity and excellent in step coverage, can be formed by using a low powered apparatus.