The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2001
Filed:
Nov. 04, 1998
Applicant:
Inventor:
Naoshi Ikeda, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract
A semiconductor device comprising: a substrate, a gate insulating layer formed on the substrate, insulating isolation layers formed on each side of the gate insulating layer, an impurity diffusion region formed in the substrate beneath the insulating isolation layer, a first conductive layer formed on both the gate insulating layer and the insulating isolation layer, and an element splitting trench which split up at least the insulating isolation layer and the impurity diffusion layer into two parts respectively and form a trench in the substrate and is buried with conductive material.