The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2001
Filed:
Oct. 28, 1998
Kyu-Hyun Lee, Kyunggi-do, KR;
Abstract
A method for fabricating a Dynamic Random Access Memory (DRAM) device includes the steps of forming a word line on a substrate, forming a first insulating layer on the substrate and on the word line, forming a bit line the first insulating layer, and forming a second insulating layer on the first insulating layer and on the bit line. A sacrificial layer is formed on the second insulating layer, and a contact hole is formed through the sacrificial layer, and the first and second insulating layers. A conductive plug is formed in the contact hole, and the sacrificial layer is removed thereby exposing upper side portions of the conductive plug to define a capacitor electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile