The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2001
Filed:
Jan. 06, 1999
Applicant:
Inventors:
Anna Battaglia, Tremestieri Etneo, IT;
Piergiorgio Fallica, Catania, IT;
Cesare Ronsisvalle, Catania, IT;
Salvatore Coffa, Tremestieri Etneo, IT;
Vito Raineri, Mascalucia, IT;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/126 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/126 ;
Abstract
A method and apparatus for the localized reduction of the lifetime of charge carriers in integrated electronic devices. The method comprises the step of implanting ions, at a high dosage and at a high energy level, of a noble gas, preferably helium, in the active regions of the integrated device so that the ions form bubbles in the active regions. A further thermal treatment is performed after the formation of bubbles of the noble gas in order to improve the structure of the bubbles and to make the noble gas evaporate, leaving cavities in the active regions.