The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Jul. 16, 1998
Masato Sakao, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device which has a MOS transistor having a gate electrode composed of a first conductive film formed on a silicon substrate; a resistance element composed of a second conductive film formed on a field insulating film formed on the silicon substrate; and a plurality of conductive film patterns formed in parallel at predetermined intervals on the surface of the field insulating film, wherein the plurality of conductive film patterns are of the first conductive film type connected with a predetermined potential, and the top surface and side of each of the plurality of conductive film patterns are covered with an insulating film; wherein the resistance element is formed reciprocative-crossing several times in the orthogonal direction to the plurality of conductive film patterns through the insulating film on the plurality of conductive film patterns.