The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Dec. 22, 1999
Hyung Ki Kim, Inch'on, KR;
Jong Wook Lee, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
A silicon-on-insulator (SOI) device having a double gate, comprising: a supporting substrate; a first insulating layer formed over the supporting substrate; a first silicon layer formed over the first insulating layer, the first silicon layer including a first impurity region of a first conductivity disposed in a central portion thereof and intrinsic regions disposed at the both sides of the first impurity region; a second insulating layer formed over the first silicon layer; a second silicon layer formed over the second insulating layer, the second silicon layer including a second impurity region of a second conductivity disposed in a central portion thereof and third impurity regions of first conductivities disposed at the both sides of the second impurity region; a third insulating layer formed over the second impurity region; and a polysilicon layer doped with impurity ions of first conductivities, formed over the third insulating layer.