The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Sep. 10, 1998
Kouichi Muraoka, Sagamihara, JP;
Hitoshi Itoh, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
The present invention provides a method of forming a film, having the step of allowing a first chemical substance to be adsorbed on a surface of a silicon substrate by a gaseous phase method, and the step of introducing a gas containing a second chemical substance onto the substrate surface having the first chemical substance adsorbed thereon for forming a silicon compound layer on the silicon substrate, the silicon compound layer consisting essentially of a silicon compound formed by a reaction between the first chemical substance adsorbed on the substrate surface and the second chemical substance. The film-forming method of the present invention is featured in that one of the first and second chemical substances contains silicon and the other chemical substance contains an element other than silicon, that the step of forming the silicon compound layer is continued until the reaction between the first chemical substance and the second chemical substance is saturated, and that the step of allowing the first chemical substance to be adsorbed on the substrate surface and the step of forming the silicon compound layer are carried out alternately and a plurality of times.