The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Nov. 12, 1997
Applicant:
Inventor:
Wingra T Fang, Saratoga, CA (US);
Assignee:
Agilent Technologies, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438787 ; 438770 ;
Abstract
The rapid growth of thick thermally grown oxide layers on silicon wafers is described herein. By patterning and etching a plurality of pillars on the surface of the silicon wafer, oxide growth is primarily lateral and not vertical, enabling it to proceed much faster. In other embodiments, the pillars are fabricated with an oxygen barrier on their top surface, preventing oxide growth on the top of the pillars and resulting in an oxide layer with a more planar upper surface.
Fang, Wingra. (2000). Method for fabricating semiconductor devices with thick high quality (U.S. Patent No. 6165914). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6165914
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile