The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Nov. 18, 1999
Yohei Hiura, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A gate electrode having a polymetal structure which is composed of polysilicon, tungsten nitride and tungsten is formed on a silicon substrate by RIE where a silicon nitride film is used as a mask. Thereafter, a silicon oxide film of about 3 nm is formed by selective oxidation, and a silicon nitride film of about 10 nm is formed by CVD. Moreover, the silicon nitride film is etched by using the silicon substrate as an etching stopper. Thereafter, a silicon oxide film of about 6 nm is formed again by thermal oxidation, and a silicon nitride film of about 20 nm is formed by CVD. Then, the silicon nitride film is etched by using the silicon oxide film as an etching stopper.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile