The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Apr. 27, 1999
Chang-Won Choi, Seoul, KR;
Chang-Hwan Lee, Kyunggi-do, KR;
Chul Jung, Kyunggi-do, KR;
Min-Seok Han, Kyunggi-do, KR;
Abstract
Disclosed is an improved method for fabricating a DRAM cell capacitor which can prevent over-etching of polysilicon storage node. The method includes the steps of etching a first insulating layer on a semiconductor substrate to form a storage contact hole, filling the storage contact hole with a first conductive material to form a storage contact plug, forming a second insulating layer over the first insulating layer including the storage contact plug, forming a mask over the second insulating layer to define a storage node region, using the mask and etching the second and first insulating layers to form an opening therein to an upper surface of the storage contact plug, and filling the opening with a second conductive material to form a storage node.