The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Feb. 19, 1997
Applicant:
Inventors:
Kikuo Makita, Tokyo, JP;
Akiko Gomyo, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 95 ; 438249 ; 438250 ; 438267 ; 438286 ; 438293 ;
Abstract
The invention provides a method for selective growth of semiconductor crystals, including the step of forming a semiconductor layer in a selected region of a semiconductor substrate by using a mask, the semiconductor layer being controlled with respect to atomic ordering or natural super lattice (NSL). It is possible by the invention to control the energy gap, optical anisotropy and electrically conductive anisotropy of a semiconductor layer, and also possible by the invention to carry out two-dimensional control of material properties in a substrate in accordance with a pattern of a mask.