The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Nov. 13, 1998
Applicant:
Inventors:
Joseph Cheung-Sang Tsang, Ellicott City, MD (US);
John Burt McKitterick, Columbia, MD (US);
Assignee:
AlliedSignal Inc., Morristown, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357347 ; 257348 ; 257349 ; 257350 ; 257351 ; 257352 ; 257353 ; 257354 ; 257355 ; 257382 ; 257383 ; 257384 ;
Abstract
Electromigration in the source and drain conductors of a semiconductor device is reduced by increasing the cross-sectional areas of these conductors in accordance with an increase in a magnitude of current, thereby enabling the semiconductor device to operate at high temperatures.
Quick Actions:
Tsang, Joseph. (2000). High temperature transistor with reduced risk of electromigration and (U.S. Patent No. 6164781). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6164781
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile