The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2000

Filed:

Aug. 16, 1996
Applicant:
Inventor:

Robert Rogers Evans, III, Framingham, MA (US);

Assignee:

American Superconductor Corporation, Westborough, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257532 ; 257536 ; 363 14 ;
Abstract

An electronic circuit that comprises a MOSFET device includes source, drain and gate terminals and operates at cryogenic temperatures. The circuit includes a snubber that is connected between the source and drain terminals of the MOSFET and that has capacitance but substantially no resistance. A control element, which is coupled to at least the gate terminal of the MOSFET device, turns the device 'on' (i.e., it effects conduction in the MOSFET) by selectively applying a voltage to the gate terminal that is positive with respect to the source terminal and with respect to ground. The circuit further includes a resistive load, e.g., a resistor, that is coupled in series between the control element and the gate terminal. The control element selectively applies negative-going voltage to the gate terminal, e.g., when the MOSFET is not on.


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