The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2000
Filed:
Nov. 11, 1998
Applicant:
Inventors:
Ki Hyun Hwang, Kyungki-do, KR;
Byung-Ki Kim, Kyungki-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438424 ; 438761 ;
Abstract
A method of forming a trench isolation structure includes a low pressure chemical vapor deposition (LPCVD) that forms a silicon rich nitride layer as a mask for etching a semiconductor substrate. The LPCVD uses a mixed gas containing at least two different silicon compounds in a silicon source gas. The method can prevent deterioration of gate oxide layer reliability, and enhance an in-wafer and batch uniformity of the silicon rich nitride layer.