The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2000
Filed:
Mar. 11, 1999
Kent Kuohua Chang, Cupertino, CA (US);
David Chi, Sunnyvale, CA (US);
Chin-Yang Sun, Ukiah, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In one embodiment, the present invention relates to a method of forming a flash memory cell, involving the steps of forming a tunnel oxide on a substrate; forming a first polysilicon layer over the tunnel oxide; forming an insulating layer over the first polysilicon layer, the insulating layer comprising an oxide layer made by low pressure chemical vapor deposition at a temperature from about 600.degree. C. to about 850.degree. C. using SiH.sub.4 and N.sub.2 O, annealing in an NH.sub.3 atmosphere at a temperature from about 800.degree. C. to about 900.degree. C., and wet oxidizing using O.sub.2 and H.sub.2 at a temperature from about 820.degree. C. to about 880.degree. C.; forming a second polysilicon layer over the insulating layer; etching at least the first polysilicon layer, the second polysilicon layer and the insulating layer, thereby defining at least one stacked gate structure; and forming a source region and a drain region in the substrate, thereby forming at least one memory cell.