The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2000
Filed:
Sep. 01, 1998
Applicant:
Inventors:
Tsai-Sheng Gao, Hsinchu, TW;
Dong-Yuan Goang, Chung Li, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ; G03F / ;
U.S. Cl.
CPC ...
430325 ; 430323 ;
Abstract
The present invention discloses a photolithography process with a gas-phase pretreatment before the development of photoresist to increase the depth of focus (DOF) of an isolated-line pattern on a substrate. A photoresist layer is coated on a substrate by using spin-on technology. Then, an exposure process is performed on the photoresist layer through a reticle to transfer a pattern of the reticle to the photoresist layer. Additionally, a gas-phase pretreatment is performed on the photoresist layer before or after the exposure process to harden the surface of the photoresist layer. Finally, a developing process is performed to form a pattern on the substrate.