The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2000
Filed:
Aug. 11, 1999
Kunio Watanabe, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A process for producing a halftone mask comprises the steps of: (a) forming an electron beam resist film on a mask blank which includes a translucent film and a light-block film sequentially formed on a transparent substrate; (b) irradiating an electron beam to the electron beam resist film in such a dose that the electron beam resist film remains in a predetermined thickness by development in a first write area and is completely removed by development in a second write area; (c) developing the electron beam resist film thereby to form an electron beam resist film retaining the predetermined thickness in the first write area and having an opening in the second write area; (d) patterning the light-block film using the resulting electron beam resist film as a mask; (e) ashing the electron beam resist film to remove the electron beam resist film from the first write area completely; (f) patterning the translucent film using the patterned light-block film as a mask; and (g) patterning the light-block film using the resulting electron beam resist film as a mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile