The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2000
Filed:
Oct. 27, 1999
Helmut Horst Tews, Poughkeepsie, NY (US);
Brian Lee, New York, NY (US);
Infineon Technologies North America Corp., San Jose, CA (US);
Abstract
A method of manufacturing a capacitor is provided where at least a portion of a silicon surface is amorphized. The amorphized silicon surface is then subjected to an annealing process to form hemispherical silicon grains (HSG) from the amorphized portion of the silicon surface to form at least a portion of a first electrode of the capacitor. A capacitor dielectric is then formed over the hemispherical silicon grains. A second electrode is then formed over the capacitor dielectric.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile