The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2000

Filed:

May. 31, 1995
Applicant:
Inventors:

Nobuyuki Ohtsuka, Kawasaki, JP;

Yasuo Matsumiya, Kawasaki, JP;

Kuninori Kitahara, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438681 ; 438687 ; 438688 ; 438780 ;
Abstract

A process of growing a conductive layer on a substrate by a chemical reaction of a source gas on the substrate includes preparing a substrate having an area covered with a coating layer of a material different from a material of the substrate and an area not covered with the coating layer; supplying a first source gas onto the substrate and causing a chemical reaction of the first source gas to occur on the substrate only in the area not covered with the coating layer, thereby selectively growing a first conductive layer on the substrate only in the area not covered with the coating layer; terminating the supplying of the first source gas; and supplying a second source gas onto the substrate and causing a chemical reaction of the second source gas to occur on both of the first conductive layer and the coating layer, thereby unselective growing a second conductive layer of the same conductive material as the first conductive layer, on both of the first conductive layer and the coating layer. A chemical vapor deposition process for growing a conductive layer, includes maintaining, in a container, an amount of a source liquid containing at least one of constituent elements of the conductive layer; introducing the source liquid from the container and a heated carrier gas into a vaporizer vaporizing the source liquid by heating to generate a source gas in the vaporizer; and supplying from the vaporizer the source gas together with the heated carrier gas immediately into a reactor for chemical vapor deposition.


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