The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2000
Filed:
Jun. 06, 1995
Darrell G Hill, Plano, TX (US);
Timothy S Henderson, Richardson, TX (US);
William U Liu, Plano, TX (US);
Shou-Kong Fan, Richardson, TX (US);
Hin-Fai Chau, Plano, TX (US);
Damian Costa, Dallas, TX (US);
Ali Khatibzadeh, Plano, TX (US);
TriQuint Semiconductor Texas, Inc., Hillsboro, OR (US);
Abstract
A bipolar transistor includes a passivating layer of material 40 in the base structure 42 that serves to cover the extrinsic base region of the transistor. The passivating layer 40 is formed of a material having a wider bandgap than the base layer 44, and is heavily doped with the same doping type (n or p) as the base layer. The invention is advantageous in that the base contacts 48 of the device are made directly to the passivating layer 40 and are not in direct contact with the base layer 44. This eliminates the need for alloyed contacts and the concomitant reliability problems associated with spiking contacts. In addition, the invention is completely compatible with self-aligned production techniques.