Method for forming a capacitor of semiconductor device

Abstract

An improved method for forming a capacitor which is capable of increasing cell capacitance is disclosed. The capacitor easily formed a sequential two-step etching processes. The two-step etching include a selectively etching to form the contact hole for exposing an etch stop layer between gate electrodes, and an isotopically dry etching to maximize capacitor surface area without cleaning process after the selectively etching, an interlayer insulating layer being patterned in a manner which produces inner interlayer contact sidewalls having standing wave ripples and removes the exposed etch stop layer. As a result, it is found that the capacitor which is obtained by a simple and easy two-step dry etching exhibits an increased capacitor surface area. Furthermore, it is possible to form the stacked capacitor having sufficiently high storage capacitance without increasing the contact resistance.