The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2000
Filed:
Aug. 04, 1999
Yoo Chan Jeon, Seoul, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
A fabrication method of a capacitor includes the steps of forming conductive regions in a semiconductor substrate, forming an insulation layer on the semiconductor substrate, forming contact holes over the conductive regions by etching the insulation layer, forming conductive plugs in the contact holes, forming a trench between adjacent conductive plugs by etching the insulation layer to a predetermined depth, forming a conductive layer on the entire structure obtained after the trench formation step, forming a lower electrode by etching the conductive layer using an anisotropic etching method, and forming a dielectric layer and an upper electrode on a surface of the lower electrode. The method decreases production costs of a capacitor and facilitates the processing steps.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile