The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2000
Filed:
Dec. 01, 1998
Junichi Tsuchimoto, Hyogo, JP;
Yutaka Inaba, Hyogo, JP;
Tamotsu Ogata, Hyogo, JP;
Kiyoshi Mori, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An amorphous silicon film is formed on an interlayer insulating film to cover an upper surface of the interlayer insulating film, and a side surface and a bottom surface of an opening formed at the interlayer insulating film. Phosphorus ions are implanted into the amorphous silicon film. The phosphorous ions are implanted into the amorphous silicon film located on the upper surface of the interlayer insulating film to prevent crystal grains from growing, and thus a polysilicon film having no hemispherical grains is formed. Accordingly, a semiconductor device having capacitors with respective storage nodes adjacent to each other that are electrically isolated properly is obtained.