The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2000
Filed:
Jun. 14, 1999
Hiroaki Ammo, Kanagawa, JP;
Hiroyuki Miwa, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of producing a semiconductor device by which the resistivities of the base, collector, and source/drain regions in a Bi-CMOS are decreased and the production step is simplified. A method of producing a semiconductor device comprising the steps of forming a gate electrode (the first semiconductor layer) on a substrate; forming an insulating film; forming a second semiconductor layer; leaving the second semiconductor layer and the insulating film on the bipolar part and removing them on the CMOS part to form sidewalls on the side faces of the gate electrode; forming source/drain regions; forming a Ti layer over the entire surface and forming silicide on the surfaces of the second semiconductor layer, the source/drain regions, and the gate electrode; and forming a base electrode by patterning the second semiconductor layer.